Industrial Manuals

This paper focuses on the structural aspects of two basic types of RF power MOSFETS: the DMOS and the LDMOS. The comparison of the DMOS and LDMOS structures reveals the basic fundamentals of the RF MOSFET device technology and the challenges that exist to improve their RF performance and reliability.

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This article introduces the characteristics of LDMOS technology and the relationship between LDMOS devices and RF performance. By understanding the parameters and characteristics of LDMOS devices, design engineers can better utilize these devices and effectively monitor the semiconductor manufacturing process.

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The SMP1304 series of plastic packaged, surface mountable, low capacitance (0.3 pF) silicon PIN diodes are designed for use in attenuator applications from 5 MHz to beyond 2 GHz.

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This application note describes a broadband power amplifier operating over the frequency range 88 - 108 MHz using the new STMicroelectronics RF MOSFET transistor SD2932.

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This document describes the ruggedness improvement of RF DMOS devices, as well as the impedance mismatch issue between the output and load of RF power transistors. A theoretical model simulating the failure mode mechanism is proposed, and relevant corrective actions are undertaken.

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LDMOS is a high-performance, low-power, high-density, chipless capacitor RF power amplifier

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This application note introduces the latest addition to STMicroelectronics’ RF Power MOSFET family, the SD2933. The SD2933 is a single-ended, 50 V, 300 W, gold (Au) metallized, N-channel, vertical Power MOSFET, intended for use up to 150 MHz, with exceptionally high gain, and enhanced thermal packaging which makes it ideal for various applications including plasma generation, excitation and FM broadcast applications.

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PowerSO-10RF is a new type of RF plastic package introduced by STMicroelectronics. It features excellent thermal performance, high power capability, high power density and suitability for all reflow soldering methods.

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MDmesh™ is a revolutionary technology and a “conceptual” breakthrough in the high voltage power MOSFET area. It is named after the combination of a new vertical drain structure with STMicroelectronics’ well established Mesh Overlay™ layout.

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A1373 and A1374 are high precision linear Hall effect sensors with external programmable features, which are produced by Allegro MicroSystems, Inc. It has extremely low offset and minimal temperature drift. It can be used in automotive and industrial linear position sensing applications that require increased reliability and accuracy over conventional contacting-potentiom- eter solutions.

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This document provides mounting recommendations for ceramic packages used in the assembly of DMOS radio frequency transistors suitable for applications such as ISM and FM broadcasting.

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This document describes the application of ESBT STC03DE170HV in a 3-phase auxiliary power supply. It discusses the theory and evolution of ESBTs, as well as the characteristics and requirements of this application.

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Presents a new high voltage MOSFET structure which leads to static as well as dynamic performances far ahead conventional Power MOSFET devices. The impact of the particular features of the device is analyzed and quantified in a case study regarding a DC-DC boost converter, which is used in a power factor corrector (PFC) converter. Results obtained from the analysis of the electrical and thermal behavior of the component in the specific are discussed.

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This application notes aims to outline the characteristics of a new power device that joins the peculiarities of an STMicroelectronics fast-switching PowerMESH™ IGBT with some novel protection features. A driver circuit is integrated in the power device to implement over-current protection and soft thermal shutdown. The current limitation also ensures a highly short-circuit rated device. Moreover the low threshold voltage and input current make it possible to drive the device directly from the output pin of a microprocessor. The static and dynamic behavior of the device will be illustrated and an application will be suggested.

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This document introduces the structure and working principle of IGBTs, as well as their main static and dynamic characteristics. Furthermore, the behavior in operation is analyzed and discussed in more detail to provide a complete overview of the main parameters, features, and static and dynamic behaviors of this power component.

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This paper introduces a new design method for low voltage power MOSFETs suitable for high current low voltage converter applications. It uses a new strip-based structure and presents interesting characteristics due to the advanced design rules typical of VLSI processes and strong reduction of the on-state resistance.

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This paper presents an innovative technique for designing and manufacturing power electronic modules using high performance cost-effective IGBTs assembled in plastic package. This technique allows optimizing both the power switching devices and the converter, in terms of power handling, reliability and cost. This design is well adapted to mass production required by automotive applications.

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This article introduces the topologies implemented in Emergency Lighting Applications and the use of STMicroelectronics' power bipolar transistors. STSA851 is a power bipolar transistor with high gain performance and low saturation voltage. It is suitable for the drive circuit of emergency lamps.

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This technical document shows how to use the integrated circuit TSM108, the PNP power bipolar transistor STN790A, or the P channel power MOSFET STS3DPFS30, the NPN power bipolar transistor STSA1805 and the diode 1N5821 in order to design and realize a CCFL application.

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