Transistor Manuals - Manual Library

NXP BLF8G20LS-230V transistor

230 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.

NXP BLF25M612 BLF25M612G transistor

12 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF25M612 and BLF25M612G are drivers designed for high power CW applications and is assembled in a high performance ceramic package.

NXP BLF8G09LS-400PW 8G09LS-400PGW transistor

400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz.

NXP BLF888D BLF888DS transistor

A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

NXP BLF8G10LS-300P transistor

300 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.

NXP BLC8G27LS-100AV transistor

100 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2490 MHz to 2690 MHz.

NXP BLF8G09LS-400PW transistor

400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz.

NXP BLP10H605 transistor

A 5 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at frequencies from HF to 1400 MHz.

NXP BLF8G27LS-100 transistor

100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.

NXP BLF8G24LS-150V 8G24LS-150GV 24LS-100GV transistor

230 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.

NXP BLF184XR_BLF184XRS transistor

A 700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

CET H2288 Transistor

FEATURES 20V, 5.2A , RDS(ON) = 26mW @VGS = 4.5V. RDS(ON) = 35mW @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package.

CET CEG2288 Transistor

FEATURES 20V, 6.2A, RDS(ON) = 24mW @VGS = 4.5V. RDS(ON) = 34mW @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 Package.

CET CEH2310 Transistor

FEATURES 30V, 6.2A , RDS(ON) = 33mW @VGS = 10V. RDS(ON) = 38mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. Lead-free plating; RoHS compliant.

CET CEH2305 Transistor

FEATURES -30V, -4.9A , RDS(ON) = 52mW @VGS = -10V. RDS(ON) = 65mW @VGS = -4.5V. RDS(ON) = 119mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. Lead free product is acquired.