Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
This document is a product datasheet for the NXP BUK9K8R7-40E, which features a dual N-channel 40 V, 9.4 mΩ logic level MOSFET design in an LFPAKS6D (Dual Power-SO8) package using TrenchMOS technology.
The device is designed and qualified to the AEC Q101 standard for use in high performance automotive applications, specifically targeting 12 V systems for motors, lamps, solenoid control, and transmission control. It supports thermally demanding environments with a junction temperature rating of up to 175 °C.
The device uses an LFPAKS6D (Dual Power-SO8) plastic single ended surface mounted package.
Yes, the product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
The device supports thermally demanding environments with a junction temperature rating of up to 175 °C.