Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
The NXP BUK7K17-60E is a dual standard level N-channel MOSFET housed in an LFPAK56D (Dual Power-SO8) package. It utilizes TrenchMOS technology and is qualified to the AEC Q101 standard for use in high-performance automotive applications. The device features a drain-source voltage rating of 60 V and a total power dissipation of 53 W at 25 °C.
| Package type | LFPAK56D |
|---|
It is designed and qualified for use in high performance automotive applications.
Yes, it is suitable for 12 V Automotive systems.