NXP BUK9880-55A TrenchMOS FET Datasheet

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications


NXP BUK9880-55A TrenchMOS FET Datasheet - cover page
Brand
NXP
Category
TrenchMOS
Document type
Datasheet
Language
English
Pages
14
File format
PDF
File size
307 KB
Published
26 May, 2014
Updated
25 September, 2023
MD5 checksum
E24B9E744E9BB1B0FD240F5BF64A9716

About this manual

The NXP BUK9880-55A is a logic level N-channel enhancement mode Field-Effect Transistor (FET) utilizing TrenchMOS technology. It is available in a plastic SC-73 (SOT223) package and is qualified to AEC standards for use in automotive critical applications. Key features include low conduction losses due to low on-state resistance and suitability for logic level gate drive sources.

What's inside

  • General description
  • Features and benefits
  • Applications
  • Pinning information
  • Ordering information
  • Limiting values
  • Thermal characteristics
  • Characteristics
  • Export control
  • Trademarks

Specifications

Package typeSC-73 plastic surface-mounted package
Junction temperature-55 to 150 °C

Frequently asked questions

What is the primary application of the BUK9880-55A?

It is designed and qualified for use in automotive critical applications.

Is the BUK9880-55A suitable for logic level gate drive?

Yes, it is suitable for logic level gate drive sources.

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