Hyperfast power diode in a SOT429 (3-lead TO247) plastic package.
The document describes the NXP BYC30WT-600P, a hyperfast power diode housed in a SOT429 (3-lead TO-247) plastic package. Key features include low leakage current, low thermal resistance, and reduced reverse recovery current to minimize switching losses in associated MOSFET or IGBT circuits.
| Repetitive peak reverse voltage | 600 V |
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The storage temperature ranges from -65 to 175 °C.