Two planar PIN diodes in common cathode configuration in a SOT23 small SMD plastic package.
The NXP BAP70-05 is a silicon PIN diode featuring two planar diodes in a common cathode configuration within a small SOT23 surface-mounted plastic package. It is designed for high voltage and current control with low diode capacitance and low series inductance. Typical applications include RF attenuators and switches.
| Reverse voltage continuous | 50 V |
|---|---|
| Forward current continuous | 100 mA |
| Total power dissipation | 250 mW |
| Storage temperature | -65 to +150 °C |
| Junction temperature | -65 to +150 °C |
| Forward voltage | 0.95 V typ |
| Reverse current | 100 nA max |
| Diode capacitance | 600 fF typ |
| Package type | SOT23 |
The diode is intended for use in RF attenuators and switches.
The maximum continuous forward current is 100 mA.
The device can withstand a continuous reverse voltage of up to 50 V.