This user guide explains how to adjust PFC circuit parameters such as inductance, switching frequency, and gate drive voltage using the ROHM Solution Simulator.
This User's Guide for the ROHM Solution Simulator Power Device (PFC Edition) provides a summary of basic adjustment methods and knowledge for PFC circuits. It is designed to help users solve common design challenges, such as optimizing circuit conditions or resolving startup issues, by offering specific solutions for various parameters.
The document covers six main topics: an overview of PFC circuit configurations, methods for adjusting inductance values (L) and switching frequencies (fsw) to control current ripple, and guidelines for setting appropriate gate drive voltages (Vgs) and gate resistors (Rg) for SiC-MOSFETs. It also discusses the optimization of dead time settings to balance efficiency and power factor. This manual is written in Japanese.
The guide recommends setting Vgs to approximately 18V to balance efficiency and safety, noting that values below 14V or above 22V are unsuitable.
To keep loss below 5W, the Rg values should be set to 45Ω or less for the source side and 18Ω or less for the sink side.
The optimal dead time is 200ns, which provides a margin over the 100ns minimum required to prevent through-current.