User guide for ROHM's 4th‑gen SiC MOSFET half‑bridge evaluation board, covering safety, wiring, gate‑drive settings and protection.
This guide explains how to safely operate the 4th‑generation SiC MOSFET half‑bridge evaluation board (models P04SCT4018KE‑EVK‑001 and P05SCT4018KR‑EVK‑001). It includes safety warnings for high‑voltage work, board inspection steps, and procedures for powering up and down.
The document details LED status indicators, connector pin assignments, methods to set gate‑drive voltages and resistors, and protection‑circuit performance. It also provides test‑condition examples and troubleshooting tips for high‑voltage operation. This manual is written in Chinese.
| High‑voltage DC supply (HVdc) | 800 V |
|---|---|
| Negative gate bias (VEE2) adjustment range | -4.5 V to -2 V |
| Red LED indication condition | HVdc > 20 V |
| Turn‑on gate resistor values | HS side R55, LS side R155 |
| Turn‑off gate resistor values | HS side R56, LS side R156 |
| Test condition example (SCT4018KR) | 800 V, 250 µH, ≈80 A, 2.5 µs pulse, RG_EXT = 3.3 Ω |
The red LED (labeled HV alive) lights when the high‑voltage DC rail exceeds about 20 V, indicating that hazardous voltage is present.
Turn‑on resistance is set with R55 (HS) and R155 (LS); turn‑off resistance uses R56 (HS) and R156 (LS). Changing these values modifies the MOSFET switching speed.