This datasheet details the specifications, electrical characteristics, thermal resistance, and mechanical dimensions for the onsemi NTH4L160N120SC1 Silicon…
The document provides a comprehensive overview of the NTH4L160N120SC1, an EliteSiC Silicon Carbide MOSFET designed for high-speed switching applications. Key features include a typical on-resistance of 160 mΩ, ultra-low gate charge of 34 nC, and a maximum operating junction temperature of 175 °C. The device is suitable for use in UPS systems, DC-DC converters, and boost inverters.
| Drain-to-Source Voltage | 1200 V |
|---|---|
| Continuous Drain Current (Steady State, TC = 25 °C) | 17.3 A |
| Power Dissipation (Steady State, TC = 25 °C) | 111 W |
| Operating Junction Temperature Range | -55 to +175°C |
| Typical On-Resistance | 160 mΩ |
| Total Gate Charge | 34 nC |
| Output Capacitance | 49.5 pF |
| Package Type | TO-247-4L |
The device is suitable for use in UPS, DC-DC converters, and boost inverters.
Yes, the device is Halide Free and RoHS Compliant with exemption 7a and is Pb-Free.
The maximum operating junction temperature is 175 °C.