The Toshiba TPCA8006-H is a silicon N-channel MOS field effect transistor intended for switching regulator, motor drive, and DC/DC converter applications. The document lists absolute maximum ratings, thermal characteristics, electrical characteristics, source-drain ratings, characteristic graphs, marking information, and restrictions on product use.
The datasheet gives a 100 V drain-source voltage rating, 18 A drain current, typical drain-source ON-resistance of 41 mΩ, and a gate threshold voltage range of 3.0 to 5.0 V. It also notes that the transistor is electrostatic-sensitive and must be handled with care.
| Drain-source voltage (VDSS) | 100 V |
|---|---|
| Gate-source voltage (VGSS) | ±20 V |
| Drain current (ID) | 18 A |
| Drain-source ON-resistance (RDS(ON)) | 41 mΩ (typ.) |
| Gate threshold voltage (Vth) | 3.0 to 5.0 V |
| Channel temperature (Tch) | 150 °C |
| Weight | 0.069 g (typ.) |
It is intended for switching regulator applications, motor drive applications, and DC/DC converter applications.
The drain-source voltage rating is 100 V.
The gate threshold voltage range is 3.0 to 5.0 V.
Yes, the datasheet states that the transistor is an electrostatic-sensitive device and should be handled with care.