TPCA8011-H is a high-performance N-channel MOSFET produced by Toshiba. It has the characteristics of small size, high-speed switching and low leakage current.
The TPCA8011-H is a silicon N‑channel MOSFET designed for high‑speed switching in notebook PCs, portable equipment and other electronics. It features a small footprint, low gate charge and low on‑resistance, making it suitable for DC‑DC converter applications.
The document lists maximum ratings, thermal characteristics, detailed electrical parameters and usage restrictions. It also includes handling notes, marking information and recommended operating limits for reliable integration into designs.
| Drain‑source voltage (Vdss) | 20 V |
|---|---|
| Gate charge (Qsw) | 11 nC (typ.) |
| Drain‑source ON resistance (Rds(on)) | 3.1 mΩ (typ.) |
| Gate leakage current | 10 pA (max) |
| Thermal resistance, channel‑to‑case (Rth ch‑c) | 2.78 °C·W |
| Maximum drain current (pulsed) | 40 A |
The device is rated for a maximum drain‑source voltage of 20 V.
The typical gate charge is 11 nC.
The channel temperature should be kept below 150 °C.
The typical on‑resistance is 3.1 mΩ.