This document describes the features and characteristics of reverse blocking thyristors, which are primarily designed for half-wave AC control applications, such as motor controls, heating controls, and power supplies, or wherever half-wave silicon gate-controlled devices are needed.
This document provides technical specifications for the MCR12D, MCR12M, and MCR12N silicon controlled rectifiers (SCRs). These devices are reverse blocking thyristors designed primarily for half-wave AC control applications, such as motor controls, heating controls, and power supplies. They feature a rugged TO-220AB package with glass passivated junctions for reliability.
| On-State RMS Current | 12 Amperes |
|---|---|
| Peak Non-repetitive Surge Current | 100 Amperes |
| Blocking Voltage | 400 to 800 Volts |
| Package Type | TO220AB |
| Operating Junction Temperature Range | -40 to +125 °C |
| Peak Repetitive Off-State Voltage (MCR12D) | 400 Volts |
| Peak Repetitive Off-State Voltage (MCR12M) | 600 Volts |
| Peak Repetitive Off-State Voltage (MCR12N) | 800 Volts |
They are designed primarily for half-wave AC control applications, such as motor controls, heating controls, and power supplies.
The devices have a high immunity to dv/dt with a minimum rating of 100 VAisec at 125°C.
The thermal resistance from junction to case (RθJC) is 2.2 °C/W.