The 2N5551HR is a silicon planar epitaxial NPN transistor in TO-18, TO-39 and LCC-3 packages. It is specifically designed for aerospace Hi-Rel applications and ESCC qualified according to the 5201-019 specification.
The 2N5551HR is a silicon planar epitaxial NPN transistor designed specifically for aerospace high-reliability applications. It is ESCC qualified according to the 5201-019 specification and is available in TO-18, TO-39, and LCC-3 packages. The device features linear gain characteristics and is qualified for low dose rate radiation environments up to 100 krad.
| Collector-emitter voltage | 160 V |
|---|---|
| Collector current | 0.5 A |
| Operating temperature range | -65°C to +200°C |
| Package types | TO-18, TO-39, LCC-3 |
| Radiation tolerance | 100 krad |
The maximum collector-emitter voltage is 160 V.
The device is available in TO-18, TO-39, and LCC-3 packages.