The 2N3700HR is a silicon planar epitaxial NPN transistor in TO-18 and LCC-3 packages. It is specifically designed for aerospace Hi-Rel applications and ESCC qualified according to the 5201-004 specification.
The 2N3700HR is a silicon planar epitaxial NPN transistor available in TO-18 and LCC-3 packages. It is specifically designed for aerospace Hi-Rel applications and is ESCC qualified according to the 5201-004 specification. The device features linear gain characteristics and is part of the European preferred part list (EPPL).
| Collector-emitter voltage | 80 V |
|---|---|
| Collector current | 1 A |
| Operating temperature range | -65°C to +200°C |
| DC current gain | > 100 |
| Total dissipation at Tamb < 25 °C | 0.5 W |
The maximum collector-emitter voltage is 80 V.
The maximum operating junction temperature is 200 °C.
The total dissipation is 1.8 W.