The 2N5154HR is a silicon planar epitaxial NPN transistor in TO-39, TO-257 and SMD.5 packages. It is specifically designed for aerospace Hi-Rel applications and ESCC qualified according to the 5203-010 specification.
The document describes the 2N5154HR, a silicon planar epitaxial NPN BJT designed specifically for aerospace Hi-Rel applications. It is ESCC qualified according to specification 5203-010 and available in TO-39, TO-257, and SMD.5 packages.
The datasheet provides absolute maximum ratings, electrical characteristics including current gain and switching times, thermal data for various package types, and detailed mechanical dimensions for the TO-39, TO-257, and SMD.5 configurations.
| Collector-emitter voltage (Vceo) | 80 V |
|---|---|
| Emitter-base voltage (Vebo) | 6 V |
| Collector current (Io) | 5 A |
| Total dissipation at Tj=25°C (TO-39) | 1 W |
| Total dissipation at Tj=25°C (SMD.5) | 3.3 W |
| Operating temperature range | -65 to +200°C |
The maximum operating junction temperature (Tj) is 200°C.
Yes, it is specifically designed for aerospace Hi-Rel applications and ESCC qualified according to specification 5203-010.
The device is available in TO-39, TO-257, and SMD.5 packages.