The document describes the features of the 2N5153HR high-reliability PNP bipolar transistor, including linear gain characteristics, ESCC qualification, European preferred part list (EPPL), and radiation level.
This document is a datasheet for the 2N5153HR, a silicon planar epitaxial PNP bipolar transistor designed for aerospace Hi-Rel applications. It is ESCC qualified according to specification 5204-002 and is available in TO-39, TO-257, and SMD.5 packages.
The datasheet provides absolute maximum ratings, electrical characteristics including current gain and breakdown voltages, and thermal data for various package types. It also includes mechanical data diagrams for the TO-39, TO-257, and SMD.5 packages.
| Collector-base voltage | -100 V |
|---|---|
| Collector-emitter voltage | -80 V |
| Emitter-base voltage | 5.5 V |
| Collector current | 5 A |
| Operating temperature range | -65°C to +200°C |
| Total dissipation (TO-39) | 1 W |
| Total dissipation (TO-257) | 3.3 W |
| DC current gain (hFE) | >70 |
Yes, it is ESCC qualified according to the 5204-002 specification.
The device is available in TO-39, TO-257, and SMD.5 packages.
The maximum operating junction temperature is 200 °C.