2N2905AHR is a high-reliability PNP bipolar transistor with linear gain characteristics. It is ESCC qualified and designed for aerospace Hi-Rel applications.
The document describes the 2N2905AHR, a silicon planar epitaxial PNP transistor designed for aerospace Hi-Rel applications. It is available in a TO-39 package and is qualified according to ESCC specification 5202-002.
| Collector-base voltage (VCBO) | -60 V |
|---|---|
| Collector-emitter voltage (VCEO) | -60 V |
| Emitter-base voltage (VEBO) | -5 V |
| Collector current (IC) | -0.6 A |
| Storage temperature (TSTG) | -65 to 200 °C |
| Package type | TO-39 |
Yes, it is specifically designed for aerospace Hi-Rel applications and ESCC qualified according to specification 5202-002.
The maximum operating junction temperature (TJ) is 200 °C.