2N5401HR is a Hi-Rel PNP bipolar transistor in TO-18 and LCC-3 packages. It is specifically designed for aerospace Hi-Rel applications and ESCC qualified according to the 5202-014 specification.
The document describes the 2N5401HR, a Hi-Rel PNP bipolar transistor available in TO-18 and LCC-3 packages. It is specifically designed for aerospace Hi-Rel applications and is ESCC qualified according to specification 5202-014.
Key features include linear gain characteristics, operation over an extended temperature range of -65°C to +200°C, and qualification for radiation levels up to 100 krad. The datasheet provides electrical ratings, thermal data, package mechanical dimensions, and order codes.
| Collector-emitter voltage (Vebo) | -150 V |
|---|---|
| Emitter-base voltage (Veso) | 5 V |
| Collector current (Io) | -0.6 A |
| Operating temperature range | -65°C to +200°C |
| Total dissipation (Tamp < 25°C) | 1.2 W |