2N3019HR is a high-reliability NPN bipolar transistor with linear gain characteristics and ESCC qualification. It is specifically designed for aerospace applications. It has a BVCEO of 80V and a maximum IC of 1A.
The document describes the 2N3019HR, an ESCC qualified silicon planar epitaxial NPN transistor housed in a TO-39 package. It is specifically engineered for Hi-Rel aerospace applications and features linear gain characteristics suitable for high-voltage environments up to 80V.
| Collector current (max) | 1 A |
|---|---|
| Total dissipation (Tamb < 25 °C) | 0.8 W |
| Operating temperature range | -65°C to +200°C |
Yes, it is specifically designed for aerospace Hi-Rel applications and ESCC qualified.
The maximum operating junction temperature is 200 °C.