This document describes the features and characteristics of the STP9NK60ZD - STF9NK60ZD - STB9NK60ZD N-channel SuperFREDMesh™ MOSFET products, including low on-resistance, high dv/dt capability, 100% avalanche tested, minimized gate charge, low intrinsic capacitances, and fast internal recovery diode.
This document describes the STP9NK60ZD, STF9NK60ZD, and STB9NK60ZD N-channel SuperFREDMesh™ MOSFETs. These devices feature a zener gate protection and very high dv/dt capability combined with a fast body-drain recovery diode.
| Total Dissipation (TO-220/D2PAK) | 125 W |
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The devices are available in TO-220, TO-220FP, and D2PAK packages.
The maximum repetitive or non-repetitive avalanche current is 7 A.