This is a datasheet for Fairchild Semiconductor Corporation FDP2570/FDB2570, a 150V N-Channel PowerTrench MOSFET. It is specifically designed for switching on the primary side in isolated DC/DC converter applications. This MOSFET features low on-resistance and fast switching, making it suitable for applications requiring a 150V MOSFET with low on-resistance and fast switching. It has faster switching and lower gate charge compared to other MOSFETs with similar on-resistance specifications, resulting in easier and safer driving (even at high frequencies) and higher overall efficiency in DC/DC power supply designs.
The document describes the FDP2570/FDB2570 series of N-Channel MOSFETs, which are specifically designed for switching on the primary side in isolated DC/DC converter applications. These devices feature PowerTrench technology to achieve low on-resistance and fast switching speeds.
| Drain-Source Voltage (VDSS) | 150 V |
|---|---|
| Continuous Drain Current (ID) | 22 A |
| Total Power Dissipation (PD) | 93 W |
| Maximum Junction Temperature (TJ) | +175 °C |
| Thermal Resistance, Junction-to-Case (RθJC) | 1.6 °C/W |
| On-State Drain Current (ID(on)) | 25 A |
| Total Gate Charge (Qg) | 40 nC |
It has been designed specifically for switching on the primary side in the isolated DC/DC converter application.
The maximum junction temperature rating is 175 °C.
The FDP2570 is available in a TO-220 package, while the FDB2570 is available in a TO-263AB package.