SCH1306 is a high-performance MOSFET from SANYO, with low on-resistance, ultra-high switching speed and 2.5V drive capabilities.
This document is a technical datasheet for the SANYO SCH1306, a P-channel silicon MOSFET designed as a general-purpose switching device. Key features highlighted include low on-resistance, ultrahigh-speed switching capabilities, and compatibility with 2.5V drive voltages.
| Drain-to-Source Voltage (V DSS) | -20 V |
|---|---|
| Gate-to-Source Voltage (V GSS) | ±10 V |
| Drain Current (DC) (I D) | -1 A |
| Channel Temperature (Tch) | 150 °C |
| Static Drain-to-Source On-State Resistance RDS(on)1 | 380 m Ω (typ) |
| Input Capacitance (Ciss) | 115 pF |
The SCH1306 is a P-Channel Silicon MOSFET designed as a general-purpose switching device.
The device supports a 2.5V drive.