SCH2812 is a composite N-channel MOSFET and Schottky diode from Sanyo Electric. It features low on resistance, ultra-fast switching, and 4V drive.
The Sanyo SCH2812 is a composite switching device that integrates an N-channel MOSFET and a Schottky barrier diode (SBD) into a single package. This design allows for high-density mounting and is suitable for general-purpose switching applications. The device features low on-resistance for the MOSFET section and a short reverse recovery time for the SBD section. This manual is written in Japanese.
| Drain-Source Voltage | 30 V |
|---|---|
| Gate-Source Voltage | 20 V |
| Drain Current (DC) | 1.4 A |
| Drain Current (Pulse) | 5.6 A |
| Package Type | TO-295 |
| On-Resistance (Typical) | 230 mΩ |
| Reverse Voltage (SBD) | 15 V |
| Average Output Current (SBD) | 0.5 A |
The maximum junction temperature is 150°C.
The typical reverse recovery time is 10 ns.
No, this product is not designed for applications requiring extremely high reliability such as life support devices.