SCH1311 is a low on-resistance, ultrahigh-speed switching, 4V drive MOSFET with a maximum working voltage of 30V and a maximum working current of 1.5A.
This document is a datasheet for the SANYO SCH1311, a P-Channel Silicon MOSFET designed as a general-purpose switching device. Key features highlighted include low ON-resistance and ultrahigh-speed switching capabilities suitable for AV drive applications.
The datasheet provides absolute maximum ratings, electrical characteristics, and graphical data regarding switching times, capacitance, and power dissipation. It also includes package dimensions and specific usage notes regarding electrostatic discharge precautions.
| Drain-to-Source Voltage | -30 V |
|---|---|
| Gate-to-Source Voltage | +20 V |
| Drain Current (DC) | -1.5 A |
| Drain Current (Pulse) | -6.0 A |
| Allowable Power Dissipation | 0.8 W |
| Channel Temperature | 150 °C |
| Storage Temperature | -55 to +150 °C |
| Static Drain-to-Source On-State Resistance | 25 to 290 mΩ |
The allowable power dissipation is 0.8 W when mounted on a ceramic board measuring 900mm² x 0.8mm.
The device can be stored between -55°C and +150°C.