SCH1419 is a N-channel MOS-shaped silicon field-effect transistor produced by Sanyo Electric. It features low on-resistance, ultra-fast switching and 2.5V drive.
The document is a technical specification sheet for the Sanyo SCH1419, an N-channel MOSFET designed as a switching device. Key features highlighted include low on-resistance, ultra-fast switching speeds, and operation with 2.5V drive voltage.
The datasheet details absolute maximum ratings such as drain-source voltage (30 V) and drain current (6 A pulse), along with electrical characteristics like input capacitance and turn-on delay time. It also includes application graphs for on-resistance versus gate-source voltage, switching times, and safe operating areas. This manual is written in Japanese.
| Drain-Source Voltage (V_DSS) | 30 V |
|---|---|
| Gate-Source Voltage (V_GSS) | +/- 12 V |
| Drain Current (DC) (I_D) | 1.5 A |
| Drain Current (Pulse) (I_DP) | 6 A |
| Power Dissipation (Ceramic Substrate) | 0.8 W |
| Channel Temperature (T_ch) | 150 C |
| Storage Temperature Range | -55 to +150 C |
The absolute maximum drain-source voltage (V_DSS) is rated at 30 V.
The absolute maximum DC drain current (I_D) is rated at 1.5 A.