This document describes the features and characteristics of the SCH1417 model, including low on-resistance, ultra-high speed switching, and 1.8V drive.
The document is a technical datasheet for the Sanyo SCH1417, an N-channel silicon field-effect transistor (MOSFET). It highlights key features such as low on-resistance, ultra-fast switching, and 1.8V drive capability. The text is primarily in Japanese with English headers for specific sections like Absolute Maximum Ratings and Electrical Characteristics. This manual is written in Japanese.
| Drain-Source Voltage (Vdss) | 5 V |
|---|---|
| Gate-Source Voltage (Vcss) | 10 V |
| Drain Current (DC) (ID) | 1.8 A |
| Drain Current (Pulse) (IDP) | 7.2 A |
| Power Dissipation (PD) | 0.65 W |
| Channel Temperature (Tch) | 150 SC |
| Storage Temperature (Tstg) | -55-+150 SC |
| On-Resistance (RDs(on)) | 120 mQ |
| Turn-On Delay Time (td(on)) | 7.8 ns |
| Rise Time (tr) | 27 ns |
The device supports a maximum drain current of 1.8 A under DC conditions.
The permitted power loss is 0.65 W when installed on a ceramic substrate measuring 900mm x 0.8mm.
The absolute maximum gate-to-source voltage is rated at 10 V.