SCH2816 is a compound device produced by SANYO, which integrates N-channel MOSFET (SCH1416) and Schottky diode (SS05015). It has the characteristics of low on-resistance, ultra-fast switching, 4V driving and so on.
This document is a technical datasheet for the SANYO SEMICONDUCTOR SCH2816. It describes a composite type device that integrates an N-channel MOSFET (SCH1416) and a Schottky Barrier Diode (SS05015) into a single package, enabling high-density mounting.
The datasheet provides absolute maximum ratings for both the MOSFET section and the SBD section. It includes electrical characteristics such as drain-source on-resistance, gate charge, forward voltage drop, and reverse recovery time. The document also features switching time measurement circuit diagrams and performance graphs showing parameters like power dissipation versus temperature and capacitance versus voltage. This manual is written in Japanese.
| Drain-Source Voltage (VDS) | 20 V |
|---|---|
| Gate-Source Voltage (VGSS) | 20 V |
| Drain Current (DC) ID | 1.6 A |
| Peak Drain Current (Pulse) | 64 A |
| Reverse Voltage (VR) | 15 V |
| Forward Current (IF) | 0.5 A |
| Drain-Source On-Resistance (RDS(on)) | 120 to 160 mOhm |
The device integrates an N-channel MOSFET (SCH1416) and a Schottky Barrier Diode (SS05015) into one package.
The maximum continuous drain current is 1.6 A.
The maximum allowable power dissipation is 0.6 W when mounted on a ceramic substrate.
The maximum average output current is 0.5 A.