The SANYO TT2140LS datasheet provides electrical ratings, package dimensions, and switching characteristics for this PNP triple‑diffused planar silicon…
This datasheet describes the SANYO TT2140LS PNP triple‑diffused planar silicon transistor, intended for use in color TV horizontal deflection output circuits and similar high‑speed, high‑voltage applications. It lists the device's features, absolute maximum ratings, and electrical characteristics.
Key specifications include a collector‑to‑base breakdown voltage of 1500 V, collector‑to‑emitter voltage of 800 V, continuous collector current of 6 A (15 A pulse), and a TO‑220FI (LS) package. The document also provides switching‑time test circuits, thermal limits, and safety notices for reliable integration.
| Collector‑to‑Base Voltage (V CBO) | 1500 V |
|---|---|
| Collector‑to‑Emitter Voltage (V CEO) | 800 V |
| Emitter‑to‑Base Voltage (V EBO) | 6 V |
| Continuous Collector Current (I C) | 6 A |
| Pulse Collector Current (I CP) | 15 A |
| Collector Dissipation (P C) | 2.0 W |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature (Tstg) | -55 °C to +150 °C |
| Package Type | TO‑220FI (LS) |
| DC Current Gain (hFE) typical | 5 |
The TT2140LS can handle a continuous collector current of 6 A and a pulse collector current of 15 A.
It is supplied in a TO‑220FI (LS) surface‑mount package.
The device’s collector‑to‑base breakdown voltage is rated at 1500 V.