The RF3376 is a general purpose, low-cost RF amplifier IC from RF Micro Devices, Inc. It is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) pro- cess, and has been designed for use as an easily-cas- cadable 50Ω gain block. The device operates in frequency bands up to 6000MHz and features 22dB small signal gain, +2.0dB noise figure, and +11dBm output P1dB.
The RF3376 is a general purpose, low-cost RF amplifier IC manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process. It is designed for use as an easily-cas-cadable 500 gain block, suitable for IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000MHz. The device is self-contained with 50Q input and output impedances and requires only two external DC-biasing elements to operate as specified.
The document provides absolute maximum ratings, electrical specifications including gain and noise figure across various frequencies, and functional block diagrams. It also includes application schematics, evaluation board layouts, and performance graphs illustrating characteristics such as gain versus frequency, output IP3, and noise figure across different temperatures.
| Frequency Range | DC to >6000 MHz |
|---|---|
| 3dB Bandwidth | 2 GHz |
| Small Signal Gain | 22dB |
| Noise Figure | +2.0dB |
| Output P1dB | +11dBm |
| Operating Ambient Temperature | -40 to +85 °C |
| Operating Current | 35 mA |
| Device Operating Voltage | 3.4 3.5 V |
The device operates from DC to greater than 6000MHz.
The recommended bias current is 35mA to ensure the highest possible reliability and electrical performance.