The RF3376 is a general purpose, low-cost RF amplifier IC from RF Micro Devices, Inc. It is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) pro- cess, and has been designed for use as an easily-cas- cadable 50Ω gain block. The device operates in frequency bands up to 6000MHz and features 22dB small signal gain, +2.0dB noise figure, and +11dBm output P1dB.