The RF3394 is a general purpose, low-cost RF amplifier IC manufactured by RF Micro Devices on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process. It is designed for use as an easily-cas- cadable 50Ω gain block and is widely used in basestation, broadband, low-noise gain blocks, IF or RF buffer amplifiers, driver stage for power amplifiers, final PA for low-power applications and high reliability applications.
The RF3394 is a general purpose, low-cost RF amplifier IC manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process. Designed for use as an easily cascaded 50 Ohm gain block, it is suitable for IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000MHz. The device is self-contained with 50 Ohm input and output impedances and requires only two external DC-biasing elements to operate as specified.
| Frequency Range | DC to >6000 MHz |
|---|---|
| 3dB Bandwidth | 3 GHz |
| Typical Gain | 20.2 dB |
| Output IP3 | +32 dBm |
| Output Power | +18 dBm |
| Noise Figure | 3.5 dB |
| Operating Current | 80 mA |
| Mean Time To Failure | 3065 years |
The device operates from DC to greater than 6000 MHz.
The recommended bias current is 65 mA to ensure the highest possible reliability and electrical performance.
The device uses a 12-Pin QFN package with a 3mm x 3mm footprint.