The RF3375 is a general purpose, low-cost RF amplifier IC from RF Micro Devices. It is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and designed for use as an easily-cascadable 50Ω gain block. It has a operating frequency range of DC to 6000MHz, 13.2dB small signal gain, +28dBm output IP3 and +16.0dBm output P1dB.
The RF3375 is a low-cost, self-contained Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process amplifier designed for use as an easily-casable 50Q gain block. It operates in frequency bands up to 6000MHz and requires only two external DC-biasing elements.
| Frequency Range | DC to >6000 MHz |
|---|---|
| Small Signal Gain | 13.2dB |
| Output IP3 (Typical) | +28dBm |
| Operating Current | 65 mA |
| Mean Time to Failures | 1500 years |
The device provides a typical small signal gain of 13.2dB.
65mA is the recommended bias to ensure the highest possible reliability and electrical performance.
Yes, a DC blocking capacitor should be used for both input and output pins to prevent thermal instability.