APT15GP90B is a new generation of high voltage power IGBTs using Punch Through Technology, ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
This document is a datasheet for the Advanced APT15GP90B, a high voltage Power MOS IGBT designed for high frequency and high voltage switching applications, particularly in switchmode power supplies. The device utilizes Punch Through Technology to achieve low conduction loss and low gate charge.
| Collector-Emitter Voltage | 900 V |
|---|---|
| Total Power Dissipation | 291 Watts |
| Operating Junction Temperature Range | -55 to 150 °C |
| Input Capacitance | 1100 pF |
| Package Weight | 5.90 gm |
The device has a maximum collector-emitter voltage rating of 900 volts.
The total power dissipation is rated at 291 watts.