APT15GT60BRD 600V 30A is a high voltage power IGBT launched by APT company. It adopts non-punch through technology, combined with APT's free-wheeling ultraFast Recovery Epitaxial N-channel MOSFET, with high withstand voltage, large current, low voltage drop, high frequency, high reliability and other characteristics.
This document provides technical specifications and characteristics for the APT15GT60BRD device. It details the performance of the Thunderbolt IGBT™ combined with an ultraFast Recovery Epitaxial Diode (FRED), highlighting features such as low forward voltage drop, high frequency switching capability up to 150KHz, and avalanche rating.
| Collector-Emitter Voltage | 600 V |
|---|---|
| Continuous Collector Current @ Tj = 25°C | 30 A |
| Pulsed Collector Current @ Tj = 25°C | 60 Amps |
| Total Power Dissipation | 125 Watts |
| Operating and Storage Junction Temperature Range | -55 to 150 °C |
| Maximum Average Forward Current (Tj = 90°C) | 15 A |
The maximum collector-emitter voltage is 600 volts.