The data sheet is APT15GT60KR's parameter table, which mainly includes BVCES, RBVCES, VGE(TH), VCE(ON), ICES, IGES and other parameters.
This document provides technical specifications for the Advanced Power Technology APT15GT60KR, a high voltage power IGBT utilizing Non-Punch Through Technology. It features superior ruggedness and ultrafast switching speeds up to 150KHz.
The datasheet lists maximum ratings such as a collector-emitter voltage of 600V and continuous collector currents ranging from 31A at 25°C to 15A at 110°C. It also includes static electrical characteristics like gate threshold voltage and dynamic parameters including turn-on/off delay times and switching energies.
| Collector-Emitter Voltage (Vces) | 600 V |
|---|---|
| Continuous Collector Current @ Tc = 25°C | 31 Amps |
| Total Power Dissipation (Pp) | 135 Watts |
| Operating and Storage Junction Temperature Range | -55 to 150 °C |
The device supports a continuous collector current of 31 Amps when the junction temperature is maintained at 25°C.
The IGBT can operate or be stored within a junction temperature range of -55 to 150 degrees Celsius.