This is the datasheet for the BC327/D PNP silicon small signal transistor.
This document provides technical data for Motorola BC327 and BC328 series PNP silicon amplifier transistors. It details maximum ratings such as collector-emitter voltage and continuous collector current, along with thermal characteristics and operating temperature ranges.
The datasheet also lists electrical characteristics including DC current gain, breakdown voltages, and small-signal parameters. It includes graphical representations of the safe operating area, saturation region, and temperature coefficients, as well as package dimensions for the TO-92 (TO-226AA) style.
| Collector-Emitter Voltage (VcEO) | -45 V (BC327), -25 V (BC328) |
|---|---|
| Collector Current (Continuous) | -800 mA |
| Total Device Dissipation @ Ta = 25°C | 625 mW |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction to Ambient | 200 °C/W |
| DC Current Gain (hFE) Typ | 630 (BC327/BC328) |
| Current-Gain Bandwidth Product (fT) | 260 MHz |
The package is TO-92 (TO-226AA) style.
The maximum storage temperature is +150 °C.