This paper presents a new PSPICE subcircuit that can simulate power MOSFETs over a wide range of temperatures. The subcircuit uses an empirical method to model MOSFET characteristics such as on-state and off-state resistance, gate equivalent series resistance, body diode effects, breakdown voltage, and capacitance for temperatures between -55oC and 175oC.
The document describes the development of a new empirical sub-circuit implemented in PSPICE to accurately model the electrical and thermal responses of vertical DMOS power MOSFETs. This model addresses gaps in standard libraries by incorporating thermal behavior, gate charge characteristics, body diode effects, and breakdown voltage across temperatures ranging from -55°C to 175°C.
The model accurately portrays responses for temperatures between -55°C and 175°C.
The example demonstrates a synchronous rectifier producing 100 watts at 100kHz.
The ripple voltage for the rectifier output is 5mV RMS.