This document presents an empirical self-heating SPICE MOSFET model for vertical DMOS power MOSFETs, which accurately represents the electrical and thermal responses. This model integrates the thermal and electrical models of a VDMOS MOSFET and is independent of SPICE's global temperature definition. Existing models can be easily upgraded to self-heating models.
The document introduces a revised macro-model for VDMOS MOSFETs designed to address inaccuracies in standard SPICE models, particularly regarding dynamic performance and temperature dependence. The new implementation combines existing accurate electrical models with a self-heating thermal model that is independent of the global temperature definition found in standard simulations.
The current source G_Pdiss uses a scaling ratio of 1A = 1W dissipation to represent instantaneous power dissipation.
In-circuit measurements were performed with the device case temperature interfaced to a large heatsink at a temperature of 25°C.
The junction temperature and case temperature use the scaling factor 1V = 1°C.