The SMBD6100 is a high-voltage switch diode produced by Texas Instruments. Its maximum reverse voltage is 70 volts, maximum forward current is 200 milliamperes, and maximum operating temperature is 150 degrees.
This document is a datasheet for the Siemens SMBD 6100, a silicon switching diode array designed for high-speed switching applications. The device features a common cathode configuration and is housed in a SOT-23 package, available on tape and reel.
The datasheet provides comprehensive electrical characteristics, including DC parameters such as breakdown voltage and forward voltage, as well as AC characteristics like diode capacitance and reverse recovery time. It also lists maximum ratings for voltage, current, and power dissipation.
| Reverse voltage | 70 V |
|---|---|
| Peak reverse voltage | 70 V |
| Forward current | 200 mA |
| Surge forward current | 4.5 A |
| Total power dissipation | 250 mW |
| Junction temperature | 150 °C |
| Storage temperature range | -65...+ 150 °C |
| Diode capacitance | 2.5 pF |
The maximum reverse current is 100 nA when the reverse voltage is 50V.
The maximum reverse voltage is 70 V.
The maximum total power dissipation is 250 mW.
The maximum junction temperature is 150 °C.