The BFQ135 is a NPN 6.5 GHz wideband transistor manufactured by Philips Semiconductors. It features optimum temperature profile and excellent reliability properties.
This document is a product specification datasheet for the Philips BFQ135, an NPN wideband transistor designed for frequencies up to 6.5 GHz. The device features emitter-ballasting resistors and gold sandwich metallization to ensure optimum temperature profiles and reliability. It is housed in a 4-lead dual-emitter SOT172A2 package with a ceramic cap.
The datasheet provides comprehensive electrical characteristics, including limiting values for voltage and current, thermal resistance data, and performance metrics such as transition frequency (fT) and maximum unilateral power gain (Gum). It also includes application information suggesting use in MATV and microwave amplifiers, radar systems, and oscilloscopes.
| Product Type | NPN wideband transistor |
|---|---|
| Maximum Collector-Emitter Voltage (VCEO) | 19 V |
| Maximum Collector Current (IC) | 150 mA |
| Total Power Dissipation (Ptot) | 2.7 W |
| Package Type | SOT172A2 |
The maximum junction temperature (Tj) is 200 °C.
The maximum total power dissipation is rated at 2.7 W when the case temperature is below 145 °C.
The maximum collector-emitter voltage with an open base is 19 V.
This transistor comes in a 4-lead dual-emitter SOT172A2 package with a ceramic cap.