Philips BFQ17 NPN 1 GHz Wideband Transistor Datasheet

BFQ17 is a NPN 1 GHz wideband transistor produced by Philips Semiconductors. The transistor is housed in a SOT89 plastic package and is intended for use in thick and thin film circuits. The transistor has extremely good intermodulation properties and a high power gain.


Philips BFQ17 NPN 1 GHz Wideband Transistor Datasheet - cover page
Brand
Philips
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
6
File format
PDF
File size
37 KB
Published
06 July, 2012
Updated
01 October, 2023
MD5 checksum
A4E97A4034AD9863598DB961F544ACB8

About this manual

The Philips BFQ17 is an NPN transistor in a SOT89 plastic envelope designed for application in thick and thin-film circuits. It features extremely good intermodulation properties and a high power gain, with a transition frequency up to 1.5 GHz.

What's inside

  • Description
  • Quick Reference Data
  • Limiting Values
  • Thermal Resistance
  • Characteristics
  • Package Outline
  • Definitions
  • Life Support Applications

Specifications

Collector-base voltage (open emitter)40 V
Collector-emitter voltage (open base)25 V
Peak collector current300 mA

Frequently asked questions

What is the intended application for the BFQ17 transistor?

It is intended for application in thick and thin-film circuits.

What is the maximum junction temperature?

The maximum junction temperature is 175 °C.

What is the storage temperature range?

The storage temperature ranges from -65 °C to 150 °C.

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