The LMX2119 1.9 GHz Power Amplifier is a monolithic integrated power amplifier suitable for use in the Digital European Cordless Telecommunications (DECT) system as well as other mobile telephony and wireless communications applications. It is fabricated using an advanced Gallium Arsenide technology that allows single supply (3V) operation. The LMX2119 consists of two MESFETs cascaded to provide 24.5 dB of power gain. The output power at 3.6V is 26.5 dBm with an input power level of 2 dBm. The input VSWR of the power amplifier remains constant in the ON and OFF state. The LMX2119 is available in a 16-pin SOIC surface mount plastic package.
The LMX2119 is a monolithic integrated power amplifier fabricated using Gallium Arsenide technology, designed for single +3V supply operation. It features two cascaded MESFETs providing 24.5 dB of power gain and is suitable for Digital European Cordless Telecommunications (DECT) and other mobile telephony applications.
| Frequency Range | 1880 to 1900 MHz |
|---|---|
| Power Gain | 24.5 dB |
| Output Power | +26.5 dBm |
| Supply Voltage | 3.0V to 4.6V |
| Operating Temperature | -25°C to +65°C |
| Current Consumption | 350 mA |
| Package Type | 16-pin SOIC |
The device operates on a single +3V supply.
It is suitable for DECT systems, portable wireless communications, and WLANs.
The device can be stored between -40°C and +150°C.