Philips BUK110-50GL PowerMOS Transistor Datasheet

This document is a specification of the Philips Semiconductors BUK110-50GL product, which introduces the characteristics, features, parameters, application scenarios and other information of the product.


Philips BUK110-50GL PowerMOS Transistor Datasheet - cover page
Brand
Philips
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
11
File format
PDF
File size
113 KB
Published
06 July, 2012
Updated
30 September, 2023
MD5 checksum
D87C090936A99CD3BAB29EA253458823

About this manual

The Philips BUK110-50GL is a monolithic temperature and overload protected logic level power MOSFET in a 3-pin plastic surface mount envelope. It is designed as a general-purpose switch for automotive systems and other applications, featuring a vertical power DMOS output stage with low on-state resistance.

What's inside

  • Description
  • Quick Reference Data
  • Applications
  • Features
  • Limiting Values
  • Overload Protection
  • Thermal Characteristics
  • Static Characteristics
  • Switching Characteristics
  • Envelope Characteristics

Specifications

Continuous drain source voltage50 V
Continuous drain current45 A
Total power dissipation125 W
Continuous junction temperature150 °C
Package typeSOT404

Frequently asked questions

What is the input threshold voltage?

The typical input threshold voltage is 1.5 V when the drain-source voltage is 5 V and the drain current is 1 mA.

What is the maximum continuous drain current at a junction temperature of 25 °C?

The maximum continuous drain current is 45 A when the junction temperature is 25 °C.

What is the maximum total power dissipation at a case temperature of 25 °C?

The maximum total power dissipation is 125 W when the case temperature is 25 °C.

What is the threshold junction temperature that triggers over-temperature protection?

The device triggers over-temperature protection when the junction temperature reaches 150 °C.

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