SGS-THOMSON STH60N10/FI STW60N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR handbook

Update: 28 September, 2023

This document describes the features and characteristics of STH60N10/FI STW60N10 N-channel enhancement mode power MOS transistors, including low on-resistance, high current capability, high temperature operation, etc. They are suitable for high current, high-speed switching, power converters, motor control, audio amplifiers, etc.

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MD5 Checksum: 2A5ECE7F557E9E06DE1FB7B33C0925DD

Publication date: 11 June, 2012

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PDF Link: SGS-THOMSON STH60N10/FI STW60N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR handbook PDF