This document describes the features and characteristics of STH60N10/FI STW60N10 N-channel enhancement mode power MOS transistors, including low on-resistance, high current capability, high temperature operation, etc. They are suitable for high current, high-speed switching, power converters, motor control, audio amplifiers, etc.
This document is a technical datasheet for the SGS-THOMSON STH60N10, STH60N10FI, and STW60N10 N-channel enhancement mode power MOS transistors. The devices are designed with avalanche rugged technology and feature low on-resistance (RDS(on)) values of less than 0.025 Ω for the main models.
| Total Dissipation at Tc=25°C | 200 W (TO-218), 70 W (STH60N10FI) |
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They are suitable for high current, high speed switching, solenoid and relay drivers, regulators, DC-DC & DC-AC converters, motor control, audio amplifiers, and automotive environments.
The maximum operating junction temperature (Tj) is 175°C for the TO-218 package and 150°C for the STH60N10FI.
Yes, the datasheet states that the devices are 100% avalanche tested.