This document describes the features and characteristics of AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS .250 SQ. 2LFL (M105), including high power pulsed IFF, DME, and TACAN applications, power output, gain, metallization, etc.
The SD1528-08 is a gold metallized, silicon NPN power transistor packaged in a hermetic stripline flange. It is specifically engineered for high peak power and low duty cycle applications such as Identification Friend or Foe (IFF), Distance Measuring Equipment (DME), and Tactical Air Navigation (TACAN) systems.
The device features refractory gold metallization, emitter ballasting, and a low thermal resistance of 2.0 °C/W. It is designed to operate with an input matched common base configuration, providing broadband performance suitable for frequencies ranging from 960 MHz to 1215 MHz.
| Collector-Base Voltage (VcBo) | 65 V |
|---|---|
| Collector-Emitter Voltage (VcEO) | 65 V |
| Emitter-Base Voltage (VEBO) | 3.5 V |
| Device Current (Ic) | 1.5 A |
| Power Dissipation (Ppoiss) | 87.5 W |
| Junction Temperature (Tj) | +200 °C |
| Storage Temperature (TsTa@) | -65 to +150 °C |
| Junction-Case Thermal Resistance (RTH(j-c)) | 2.0 °C/W |
| Typical Power Output (DME) | 15 W |
| Typical Gain (Gp) | 10 dB |
The device is specified with an input matched common base configuration.
Yes, it provides 20 Watts typical power output for IFF frequencies between 1030 and 1090 MHz.
The maximum rated junction temperature for this device is +200 °C.