The STB20NK50Z/STW20NK50Z is a 500V/17A N-channel MOSFET with extremely low on-resistance and excellent dv/dt capability. It is ideal for high-frequency switching power supplies, adaptors and PFC applications.
This document provides technical specifications for the STP20NK50Z, STB20NK50Z, STW20NK50Z, and STB20NK50Z-S N-Channel MOSFETs. These devices feature a Zener-Protected SuperMESH layout designed for high current, high speed switching applications such as off-line power supplies, adapters, and PFC circuits. The series offers extremely high dv/dt capability and very low intrinsic capacitances.
They are ideal for high current, high speed switching, specifically for off-line power supplies, adapters, and PFC.
The device supports a maximum continuous drain current of 17 A when the case temperature is 25°C.
The maximum total power dissipation for this MOSFET is 190 W at a case temperature of 25°C.
The typical static drain-source on-resistance is 0.23 Q, with a maximum drain-source breakdown voltage of 500 V.