This datasheet introduces the features and characteristics of M29W004BT and M29W004BB, including suppliers, models, packages, supply voltages, read and write times, erase times, storage times, programming/erase times, data retention capabilities, etc.
The M29W004BT and M29W004BB are 4 Mbit (512Kb x8) non-volatile Flash memory devices designed for single low voltage supply operations ranging from 2.7 to 3.6V. These devices feature an access time of 55ns and support 100,000 program/erase cycles per block with 20 years of data retention. They are available in a TSOP40 package and include features such as embedded byte programming, multi-block/chip erase algorithms, and ready/busy output pin status.
| Memory Capacity | 4 Mbit (512Kb x8) |
|---|---|
| Supply Voltage | 2.7 to 3.6V |
| Access Time | 55ns |
| Programming Time | 10us by Byte typical |
| Memory Blocks | 11 |
| Program/Erase Cycles | 100,000 per Block |
| Data Retention | 20 Years |
| Package Type | TSOP40 |
| Operating Temperature (Option 1) | 0 to 70 °C |
| Operating Temperature (Option 6) | -40 to 85 °C |
The manufacturer code is 20h.
The device code for the M29W004BT is EAh.
The device code for the M29W004BB is EBh.
Yes, the memory is divided into blocks that can be erased independently.