The datasheet is for STD10NF06L N-CHANNEL 60V - 0.1Ω - 10A DPAK STripFET™ POWER MOSFET. This MOSFET is realized with STMicroelectronics unique STripFET™ process and has been specifically designed to minimize input capacitance and gate charge. Therefore, it is suitable for use as a primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.
This document provides preliminary information on the STMicroelectronics STD10NF06L N-Channel 60V - 0.1Ω - 10A DPAK STripFET™ Power MOSFET. It is designed to minimize input capacitance and gate charge, making it suitable for high-efficiency, high-frequency isolated DC-DC converters in Telecom and Computer applications.
The datasheet includes absolute maximum ratings, electrical characteristics such as on-resistance and switching times, thermal data, mechanical dimensions for the DPAK package, and tape and reel shipment specifications.
| Drain-source Voltage | 60 V |
|---|---|
| Continuous Drain Current at Tc=25°C | 10 A |
| Typical On-Resistance | 0.1 Ω |
| Total Dissipation at Tc=25°C | 30 W |
| Operating Junction Temperature Max | 175 °C |
It is suitable as a primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications.
The device uses a surface-mounting DPAK (TO-252) power package.