AM83135-015 is a high power S-Band NPN RF transistor designed by ON Semiconductor for pulsed output and driver applications. This device is characterized at 100µsec pulse width and 10% duty cycle, but is capable of op- eration over a range of pulse widths, duty cycles, and temperatures, and can withstand a 3:1 out- put VSWR with a + 1 dB input overdrive. Low RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding tech- niques ensure high reliability and product consis- tency (including phase characteristics). The AM83135-015 is supplied in the IMPAC™ Hermetic Metal/Ceramic package with internal Input/Output impedance matching circuitry, and is intended for military and other high reliability applications.