AM83135-015 is a high power S-Band NPN RF transistor designed by ON Semiconductor for pulsed output and driver applications. This device is characterized at 100µsec pulse width and 10% duty cycle, but is capable of op- eration over a range of pulse widths, duty cycles, and temperatures, and can withstand a 3:1 out- put VSWR with a + 1 dB input overdrive. Low RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding tech- niques ensure high reliability and product consis- tency (including phase characteristics). The AM83135-015 is supplied in the IMPAC™ Hermetic Metal/Ceramic package with internal Input/Output impedance matching circuitry, and is intended for military and other high reliability applications.
The AM83135-015 is a high power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed output and driver applications. It is characterized at 100 usec pulse width and 10% duty cycle, capable of operation over a range of pulse widths, duty cycles, and temperatures. The device can withstand a 3:1 output VSWR with a +1 dB input overdrive.
| Power Dissipation (Tc < 50°C) | 71 W |
|---|---|
| Device Current | 3.0 A |
| Collector-Supply Voltage | 46 V |
| Junction Temperature (Pulsed RF Operation) | 250 °C |
| Storage Temperature | -65 to +200 °C |
| Junction-Case Thermal Resistance | 2.8 °C/W |
| Output Power (Typical) | 15 W |
| Gain (Typical) | 5.2 dB |
It is a high power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed output and driver applications.
The device provides a minimum of 15 W output with 5.2 dB gain under specified test conditions.