This document describes the features and characteristics of the FQB3N60 / FQI3N60 600V N-Channel MOSFET products released by Fairchild Semiconductor International in April 2000. The products are produced using advanced DMOS technology and have low on-state resistance, superior switching performance, and high energy pulse tolerance. They are suitable for high-efficiency switch mode power supplies.
This document provides design specifications for the FQB3N60 and FQI3N60 N-Channel enhancement mode power field effect transistors. Produced using Fairchild's proprietary planar stripe, DMOS technology, these devices are tailored to minimize on-state resistance and provide superior switching performance for high efficiency switch mode power supplies. The datasheet covers absolute maximum ratings, electrical characteristics, and typical performance curves.
| Drain-Source Voltage | 600 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 3.0 A |
| Continuous Drain Current (Tj = 100°C) | 1.9 A |
| Pulsed Drain Current | 12 A |
| Package Type | D2PAK |
| Total Gate Charge (Typical) | 10 nC |
| Reverse Transfer Capacitance (Typical) | 5.5 pF |
The operating and storage temperature range is -55 to +150 °C.
Yes, the devices are 100% avalanche tested.
The power dissipation is 3.13 W at Ta = 25°C.